Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots. (3rd February 2016)

• Record Type: Journal Article
• Authors: Rezvani, S J; Pinto, N; Enrico, E; D'Ortenzi, L; Chiodoni, A; Boarino, L
• Is Part Of: Journal of physics. Volume 49:Number 10(2016)
• Publication Date: 2016-02-03
• Subjects: porous silicon -- nanowire -- quantum dots -- electronic transport; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/49/10/105104
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Electronic transport properties of porous Si nanowires either with embedded Si quantum dots or with a percolative crystalline path are studied as a function of the temperature for the first time. We show that unlike bulk porous Si, the predesigned structure of the wires results in a single distinct conduction mechanism such as tunneling in the former case and variable range hopping in the latter case. We demonstrate that the geometry of the systems with a large internal surface area and high density of the Si quantum dots have a significant conduction enhancement compared to bulk porous silicon. These results can also improve the understanding of the basis of the different electronic transport mechanisms reported in bulk porous silicon.