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HARVARD Citation
Liang, H. et al. (n.d.). A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film. Materials science in semiconductor processing. pp. 582-586. [Online].
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Liang, H. et al. (n.d.). A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film. Materials science in semiconductor processing. pp. 582-586. [Online].