Field - dipole interactions in L-cysteine-thiolate self assembled at p- and n-GaAs(100) electrodes. (10th September 2015)

• Record Type: Journal Article
• Authors: Lazarescu, Valentina; Toader, Ana-Maria; Enache, Mirela; Preda, Loredana; Anastasescu, Mihai; Dobrescu, Gianina; Negrila, Catalin; Lazarescu, Mihai Florin
• Is Part Of: Electrochimica acta. Volume 176(2015)
• Page Start: 112
• Page End: 124
• Publication Date: 2015-09-10
• Subjects: GaAs -- L-cysteine -- EIS -- XPS -- AFM; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2015.06.121
• Languages: English
• ISSNs: 0013-4686

Abstract

Abstract: L-cysteine-thiolate monolayers spontaneously self-assembled on p- and n-GaAs(100) electrodes have been investigated by electrochemical impedance spectroscopy in H2 SO4 solutions. On p-doped samples a potential-induced reversible proton transfer occurs within the L-cysteine-thiolate layer during both forward and backward potential scans; in contrast, on n-doped samples it is observed only in the reverse scan. The XPS data and the fractal analysis of the AFM images point to the field - dipole interactions operating distinctively in the L-cysteine-thiolate layer formed at p- and n-doped semiconducting substrates as the origin of the observed difference. The interaction of this small but highly polar molecule with the electrostatic field driven by the diffuse distribution of the excess charge in the semiconductor subsurface region both in equilibrium and under polarization conditions turned out to play a key role in determining the optimal orientation of the two polar groups. The latter one seems to be a prerequisite for the potential-induced internal proton transfer.