Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. (18th May 2018)

• Record Type: Journal Article
• Authors: Renault, O.; Martinez, E.; Zborowski, C.; Mann, J.; Inoue, R.; Newman, J.; Watanabe, K.
• Is Part Of: Surface and interface analysis. Volume 50:Number 11(2018)
• Page Start: 1158
• Page End: 1162
• Publication Date: 2018-05-18
• Subjects: buried interface -- CrKα -- hard X‐ray -- HAXPES -- XPS; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6451
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : Applications of laboratory hard X‐ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high‐voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high‐resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.