Cite
HARVARD Citation
Chen, Y. et al. (2018). A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD. CrystEngComm. 20 (42), pp. 6811-6820. [Online].
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Chen, Y. et al. (2018). A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD. CrystEngComm. 20 (42), pp. 6811-6820. [Online].