Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction. Issue 50 (13th August 2018)

• Record Type: Journal Article
• Authors: Sang, Dandan; Wang, Qingru; Wang, Qinglin; Zhang, Dong; Hu, Haiquan; Wang, Wenjun; Zhang, Bingyuan; Fan, Quli; Li, Hongdong
• Is Part Of: RSC advances. Volume 8:Issue 50(2018)
• Page Start: 28804
• Page End: 28809
• Publication Date: 2018-08-13
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c8ra03546f
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A heterojunction of n-ZnO nanowire/p-diamond was fabricated and exhibits improved electrical transport properties, which offer a promising design for developing optoelectronic nanodevices working at the nano-scale and with severe environments. Abstract : A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I – V characteristics and relatively high performance for the electrical transport properties.