Strain and stress analysis of the oxide film surface in the chemical mechanical polishing process. (31st August 2006)

• Record Type: Journal Article
• Authors: Lin, Yeou-Yih; Lo, Ship-Peng; Chen, Cheng-Yung
• Is Part Of: International journal of computer applications technology. Volume 26:Number 4(2006)
• Page Start: 233
• Page End: 241
• Publication Date: 2006-08-31
• Subjects: finite element method -- FEM -- non-uniformity -- oxide film surfaces -- strain analysis -- stress analysis -- chemical mechanical polishing -- CMP; Technology -- Data processing -- Periodicals; 620.00285
• Languages: English
• ISSNs: 0952-8091

Abstract

A two-dimensional axisymmetric quasi-static finite element model for a chemical mechanical polishing (CMP) process of 12″ wafer was established. The strain, stress and non-uniformity of oxide film surface are examined. The findings indicate that the axial strain was the maximum in strain components and its peak occurred at the end, the axial stress had a similar trend as the axial strain, and the elastic modulus and the thickness of the pad and carrier load would significantly affect the axial strain, the von Mises stress and the non-uniformity, but those of the film have little effect.