Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping. (August 2015)

• Record Type: Journal Article
• Authors: Kuzma-Filipek, Izabela; Recaman-Payo, Maria; Li, Yuandong; Hajjiah, Ali; Duerinckx, Filip; Cornagliotti, Emanuele; Castro, Angel Uruena De; Sharma, Aashish; Borgers, Tom; Russell, Richard; Tous, Loic; John, Joachim; Haslinger, Michael; Aleman, Monica; Szlufcik, Jozef
• Is Part Of: Energy procedia. Volume 77(2015)
• Page Start: 527
• Page End: 533
• Publication Date: 2015-08
• Subjects: nPERT -- epitaxy -- Front Surface Field -- laser doping; Power resources -- Congresses; Power resources -- Periodicals; Power resources; Conference proceedings; Periodicals; 333.7905
• DOI: 10.1016/j.egypro.2015.07.075
• Languages: English
• ISSNs: 1876-6102

Abstract

Abstract: This work focuses on the fabrication of nPERT(Passivated Emitter, Rear Totally Diffused) devices incorporating an epitaxially grown single side rear-emitter. Such epi-nPERT cells are fabricated in a simplified way using the selectivity of the epitaxial deposition, which is obtained by a PECVD-SiOxlayer, that not only mask the front but also passivates the cell. The cell performance is studied in terms of: i) various front surface fields (FSF) applied prior to emitter epitaxy and ii) usage of laser doping as an alternative to laser ablation for a front contacting scheme. The results show: i) a clear relationship between the depth of the homogeneous FSF and its impact on the open circuit voltage of the devices, with a shallow FSF having the highest VOC loss due to laser damage and ii) laser doping on devices with a relatively deep diffused FSF giving 8 mV increase in VOC as compared to devices with ablated dielectrics and a VOC increase of almost 30 mV in case a shallow selective FSF is applied. This results in a best efficiency obtained so far for the epi nPERT devices of 21.6% (226 cm 2 ).