Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes. Issue 3 (1st August 2016)
- Record Type:
- Journal Article
- Title:
- Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes. Issue 3 (1st August 2016)
- Main Title:
- Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes
- Authors:
- Drabczyk, Kazimierz
Wróbel, Edyta
Kulesza-Matlak, Grażyna
Filipowski, Wojciech
Waczyński, Krzysztof
Lipiński, Marek - Editors:
- Atkinson, John
Skwarek, Agata - Abstract:
- Abstract : Purpose: In order to decrease prices of industrially produced silicon based solar cells the new low cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, ARC layers and metal electrodes. This type of cells is prepared usually using POCl3 diffusion source and metal pastes for screen printing. The diffusion process in diffusion furnace with quartz tube is slow, complicated and requires expensive equipment. The alternative for this technology are very fast in-line processes using as an equipment belt furnaces. This approach requires different dopant sources. Design/methodology/approach: In this work the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. The investigation was focused on dopant sources fabrication and diffusion processes. The doping solution was made in two stages. In the first stage, a base solution (without dopants) was made: the dropwise DI water and ethyl alcohol was added to a solution consisting of tetraethoxysilane (TEOS) and 99, 8% ethyl alcohol. Next, to the base solution was added orthophosphoric acid dissolved in ethyl alcohol. Findings: Diffused emitter layers with sheet resistance around 60 Ohm/sq were produced on solar grade monocrystalline silicon wafers using two types of dopant sources.Abstract : Purpose: In order to decrease prices of industrially produced silicon based solar cells the new low cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, ARC layers and metal electrodes. This type of cells is prepared usually using POCl3 diffusion source and metal pastes for screen printing. The diffusion process in diffusion furnace with quartz tube is slow, complicated and requires expensive equipment. The alternative for this technology are very fast in-line processes using as an equipment belt furnaces. This approach requires different dopant sources. Design/methodology/approach: In this work the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. The investigation was focused on dopant sources fabrication and diffusion processes. The doping solution was made in two stages. In the first stage, a base solution (without dopants) was made: the dropwise DI water and ethyl alcohol was added to a solution consisting of tetraethoxysilane (TEOS) and 99, 8% ethyl alcohol. Next, to the base solution was added orthophosphoric acid dissolved in ethyl alcohol. Findings: Diffused emitter layers with sheet resistance around 60 Ohm/sq were produced on solar grade monocrystalline silicon wafers using two types of dopant sources. Originality/value: In this work the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. … (more)
- Is Part Of:
- Microelectronics international. Volume 33:Issue 3(2016)
- Journal:
- Microelectronics international
- Issue:
- Volume 33:Issue 3(2016)
- Issue Display:
- Volume 33, Issue 3 (2016)
- Year:
- 2016
- Volume:
- 33
- Issue:
- 3
- Issue Sort Value:
- 2016-0033-0003-0000
- Page Start:
- Page End:
- Publication Date:
- 2016-08-01
- Subjects:
- Microelectronics -- Periodicals
621.381 - Journal URLs:
- http://info.emeraldinsight.com/products/journals/journals.htm?PHPSESSID=1turhlb3hk8vmsfsbt4nv991s5&id=mi ↗
http://info.emeraldinsight.com/products/journals/journals.htm?id=mi ↗
http://www.emeraldinsight.com/ ↗ - DOI:
- 10.1108/MI-03-2016-0031 ↗
- Languages:
- English
- ISSNs:
- 1356-5362
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.971000
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British Library STI - ELD Digital store - Ingest File:
- 8346.xml