Electromechanical properties of BaTiO3-xBaSnO3 thin films prepared via combinatorial sputtering. Issue 1 (January 2017)

• Record Type: Journal Article
• Authors: Cheng, Hongbo; Hida, Hirotaka; Ouyang, Jun; Kanno, Isaku
• Is Part Of: Ceramics international. Volume 43:Issue 1(2017)Part B
• Page Start: 1597
• Page End: 1601
• Publication Date: 2017-01
• Subjects: BaTiO3 -- Doping -- Combinatorial method -- Magnetron sputtering -- Si; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2016.10.052
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: (1−x)BaTiO3 -xBaSnO3 (BT-xBS, 0≤x≤0.20) perovskite thin films were deposited on Pt/Ti/Si substrates with uniaxial graded composition by using a dual-target combinatorial sputtering technique. These films were highly (101)-oriented and showed strong composition dependence in their electromechanical properties. The maximum value of the relative dielectric constant was 925 at around x=0.028, where the transverse piezoelectric coefficient | e 31, f | also peaked at about 1.5–1.9 C/m 2 . This | e 31, f | value is higher than those of epitaxial BaTiO3 thin films. Our results indicate that BT-xBS is a promising substitute of lead-based perovskites for applications in piezoelectric MEMS devices.