Characterization of a self‐aligned RTD using a SiNx sidewall process for high‐speed applications. Issue 12 (22nd September 2017)

• Record Type: Journal Article
• Authors: Lee, Kiwon; Lee, Hoyeon; Lee, Jongwon
• Is Part Of: Microwave and optical technology letters. Volume 59:Issue 12(2017:Dec.)
• Page Start: 3073
• Page End: 3076
• Publication Date: 2017-09-22
• Subjects: oscillator -- resonant tunneling diode -- voltage controlled oscillator; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.30875
• Languages: English
• ISSNs: 0895-2477

Abstract

Abstract: In this article, an InP‐based self‐aligned resonant‐tunneling‐diode (RTD) using a SiNX sidewall process has been fabricated and characterized for high‐speed microwave applications. A plasma‐enhanced dry‐etch technique has been used to form a vertical emitter mesa. The measured peak currents are almost constant at a peak voltage due to negligible thermionic emission in a wide temperature range up to 125°C. The extracted series resistance of the fabricated self‐aligned RTD is 14.5 Ω, which is reduced by 27% compared with that of the nonself‐aligned RTD by reducing the spacing between emitter mesa and collector metal. To the best of authors' knowledge, this is the first attempt to characterize a self‐aligned RTD using the dry‐etched mesa and the SiNX sidewall structure.