UV-Vis Photocurrent in SiOx Films with Silicon Nanocrystals Obtained by HFCVD. (2016)

• Record Type: Journal Article
• Authors: López, J.A. Luna; Valerdi, D.E. Vazquez; Salgado, G. Garcia; de la Luz, A.D. Hernandez; Conde, G. Mendoza; Simon, Z. Hernandez; Gracia, F.J. Flores; Sanchez, A. Morales; Dominguez, M.A.
• Is Part Of: Procedia engineering. Volume 168(2016)
• Page Start: 1296
• Page End: 1299
• Publication Date: 2016
• Subjects: Non-stoichiometric silicon oxide -- Photoluminescence -- Transmittance -- Current-Voltage -- HFCVD.; Engineering -- Congresses; Engineering -- Periodicals; Engineering; Conference proceedings; Periodicals; 620.005
• DOI: 10.1016/j.proeng.2016.11.349
• Languages: English
• ISSNs: 1877-7058

Abstract

Abstract: Actually, optical and electrical characteristics of the SiOx films need to be understood in order to improve and propose optoelectronics devices. Non-stoichiometric silicon oxide (SiO x ) films with embedded silicon nanocrystals (Si-ncs) were obtained by hot filament chemical vapor deposition (HFCVD) technique. The authors report high photocurrent of two-terminal metal-oxide-semiconductor (MOS)-like where light is absorbed in the SiOx films with Si-ncs on n–type silicon substrates. Operated at both bias (reverse and direct), where enhanced photocurrent and increased when applied white light, short UV and large UV were observed. The optical properties as photoluminescence and absorption spectra were obtained. Current-Voltage (I–V) measurements in dark and under illumination conditions were realized. The Si-ncs and defects in the SiOx films should have an important role in the high photocurrent. We assume that a high response of the SiOx/Si junction is achieved probably due to a combined effect of the optical down conversion and photo excited electrons in the SiOx films.