Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators. (2016)

• Record Type: Journal Article
• Authors: Thomas, S.; Jovic, A.; Morana, B.; Buja, F.; Gkouzou, A.; Pandraud, G.; Sarro, P.M.
• Is Part Of: Procedia engineering. Volume 168(2016)
• Page Start: 1144
• Page End: 1147
• Publication Date: 2016
• Subjects: coefficent of thermal exoansion -- silicon carbide -- actuators; Engineering -- Congresses; Engineering -- Periodicals; Engineering; Conference proceedings; Periodicals; 620.005
• DOI: 10.1016/j.proeng.2016.11.379
• Languages: English
• ISSNs: 1877-7058

Abstract

Abstract: In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20 °C to 300 °C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.