Origin of Analyte-Induced Porous Silicon Photoluminescence Quenching. Issue 9 (September 2017)

• Record Type: Journal Article
• Authors: Reynard, Justin M.; Van Gorder, Nathan S.; Bright, Frank V.
• Is Part Of: Applied spectroscopy. Volume 71:Issue 9(2017)
• Page Start: 2136
• Page End: 2145
• Publication Date: 2017-09
• Subjects: Porous silicon -- photoluminescence -- static quenching -- Stern–Volmer quenching -- global analysis -- decay associated spectra -- acetone; Spectrum analysis -- Periodicals; 543.505
• DOI: 10.1177/0003702817696092
• Languages: English
• ISSNs: 0003-7028

Abstract

We report on gaseous analyte-induced photoluminescence (PL) quenching of porous silicon, as-prepared (ap-pSi) and oxidized (ox-pSi). By using steady-state and emission wavelength-dependent time-resolved intensity luminescence measurements in concert with a global analysis scheme, we find that the analyte-induced quenching is best described by a three-component static quenching model. In the model, there are blue, green, and red emitters (associated with the nanocrystallite core and surface trap states) that each exhibit unique analyte-emitter association constants and these association constants are a consequence of differences in the pSi surface chemistries.