Microstructural and electrical properties of lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BZT–BCT) epitaxial films grown on Si (0 0 1) substrates. (November 2015)

• Record Type: Journal Article
• Authors: Choi, Min-Ju; Lim, Jae-Ryung; Choi, Jin-Suck; Eom, Ji-Ho; Park, Byung-Ju; Kim, Kyung-Soo; Kim, Dojin; Yoon, Soon-Gil
• Is Part Of: Scripta materialia. Volume 108(2015)
• Page Start: 96
• Page End: 99
• Publication Date: 2015-11
• Subjects: Lead-free BZT–BCT epitaxial films -- CeO2/YSZ buffered Si (0 0 1) substrate -- Pulsed laser deposition -- Crystallinity -- Electrical property; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2015.06.026
• Languages: English
• ISSNs: 1359-6462

Abstract

Graphical abstract: The highly epitaxial relationship between each layer with respect to the Si substrate was observed from the phi-scan. Abstract: Lead-free 0.5Ba(Zr0.2 Ti0.8 )O3 –0.5(Ba0.7 Ca0.3 )TiO3 (BZT–BCT) and the La0.5 Sr0.5 CoO3 (LSCO) bottom electrode films were epitaxially grown onto the CeO2 /Y0.15 Zr0.85 O1.93 (YSZ) buffered Si (0 0 1) substrates via pulsed laser deposition. The lattice alignments between CeO2 /YSZ and BZT–BCT/LSCO showed a 45° twisted cube-on-cube epitaxial relationship, indicating a high crystallinity of the BZT–BCT and LSCO films. The constituent elements in the BZT–BCT/LSCO/CeO2 /YSZ structure showed no distinct inter-diffusion between each layer. The BZT–BCT epitaxial films showed a well saturation of the polarization–electric field ( P–E ).