21.1: Invited Paper: High Throughput MOTFT with Organic Etch‐Stopper and SiNx Gate Insulator. Issue 1 (June 2015)

• Record Type: Journal Article
• Authors: Yu, Gang; Shieh, Chan‐Long; Xiao, Tian; Lee, Karman; Foong, Fatt; Wang, Guangming; Musolf, Juergen; Chen, Zhao; Chang, Frankie; Ottosson, Kristoffer; Park, Jung‐Woo; Chen, Jason; Li, Chen‐Yue
• Is Part Of: Digest of technical papers. Volume 46:Issue 1(2015)
• Page Start: 296
• Page End: 299
• Publication Date: 2015-06
• Subjects: metal‐oxide TFT -- LCD/OLED display -- image array; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.10472
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Metal‐oxide TFT (MOTFT) is promising for next generation high information content displays for both portable and TV/monitor applications. With current manufacturing capacity established originally for a‐Si TFT, it would be ideal to develop a MOTFT structure and process most compatible with the equipment available on existing a‐Si TFT line with minimal upgrade and corresponding capital investment. With such intention, we have developed bottom‐gate, top‐source/drain MOTFT with photopatternable organic etch‐stopper (ES) with performance meeting product specifications. Backplane with such MOTFT can be made with same mask counts as that with BCE process.