P‐11: Channel‐Etched CAAC‐OS FETs using Multi‐layer IGZO. Issue 1 (June 2015)
- Record Type:
- Journal Article
- Title:
- P‐11: Channel‐Etched CAAC‐OS FETs using Multi‐layer IGZO. Issue 1 (June 2015)
- Main Title:
- P‐11: Channel‐Etched CAAC‐OS FETs using Multi‐layer IGZO
- Authors:
- Shima, Yukinori
Kanemura, Hiroshi
Higano, Satoshi
Hosaka, Yasuharu
Okazaki, Kenichi
Koezuka, Junichi
Matsuda, Shinpei
Matsubayashi, Daisuke
Yamazaki, Shunpei - Abstract:
- Abstract : The improvement in the reliability of a channel‐etched fieldeffect transistor (FET) using a buried channel effect was achieved by stacking In‐Ga‐Zn‐O (IGZO) films with different compositions. In addition, a liquid crystal display panel using an IGZO multilayer c‐axis‐aligned crystal FET for a backplane was fabricated.
- Is Part Of:
- Digest of technical papers. Volume 46:Issue 1(2015)
- Journal:
- Digest of technical papers
- Issue:
- Volume 46:Issue 1(2015)
- Issue Display:
- Volume 46, Issue 1 (2015)
- Year:
- 2015
- Volume:
- 46
- Issue:
- 1
- Issue Sort Value:
- 2015-0046-0001-0000
- Page Start:
- 1158
- Page End:
- 1161
- Publication Date:
- 2015-06
- Subjects:
- oxide semiconductor -- channel‐etched -- CAAC -- stacked IGZO -- electron trap
Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/sdtp.10037 ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 8204.xml