Restraining the Band Fluctuation of CBD‐Zn(O, S) Layer: Modifying the Hetero‐Junction Interface for High Performance Cu2ZnSnSe4 Solar Cells With Cd‐Free Buffer Layer (Solar RRL 10∕2017). Issue 10 (9th October 2017)

• Record Type: Journal Article
• Authors: Li, Jianjun; Liu, Xiaoru; Liu, Wei; Wu, Li; Ge, Binghui; Lin, Shuping; Gao, Shoushuai; Zhou, Zhiqiang; Liu, Fangfang; Sun, Yun; Ao, Jianping; Zhu, Hongbing; Mai, Yaohua; Zhang, Yi
• Is Part Of: Solar RRL. Volume 1:Issue 10(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-10-09
• Subjects: Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.201770135
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Here (article No.201700075 ), a simple and feasible way to improve the interface performance of Zn(O, S) buffered kesterite thin film solar cells is reported. By a concentrated ammonium etching and subsequent soft annealing treatment, the detrimental ZnO and Zn(OH)2 secondary phases are eliminated from the Zn(O, S) layer, and the hetero‐junction performance is improved significantly, which gives rise to the boost of device performance from 1.17% to 7.2%. The temperature dependent J–V properties reveal a defect level assisted charge carrier transport mechanism across the Zn(O, S)/CZTSe interface. These encouraging results imply that Zn(O, S) buffer layer is a promising substitution for toxic CdS in the future manufacturing of high performance thin film solar cells.