Through silicon vias: from a physical point of view to a compact models initiation. Issue 4 (1st July 2014)

• Record Type: Journal Article
• Authors: Sun, Fengyuan; Lorival, Jean-Etienne; Calmon, Francis; Gontrand, Christian
• Is Part Of: Compel. Volume 33:Issue 4(2014)
• Page Start: 1462
• Page End: 1484
• Publication Date: 2014-07-01
• Subjects: Algorithms -- Analytical methods -- Applied electromagnetics -- CAD -- 3D FEM -- Circuit analysis; Electrical engineering -- Data Processing -- Periodicals; Electrical engineering -- Mathematics -- Periodicals; Electrical engineering -- Periodicals; Electronics -- Data Processing -- Periodicals; Electronics -- Mathematics -- Periodicals; 621.3
• DOI: 10.1108/COMPEL-06-2013-0201
• Languages: English
• ISSNs: 0332-1649

Abstract

Abstract : Purpose: – The substrate coupling and loss in integrated circuits are analyzed. Then, the authors extract impedances between any numbers of embedded contacts. The paper aims to discuss these issues. Design/methodology/approach: – The paper proposes a new substrate network 3D extraction technique, adapted from a transmission line method or Green kernels, but in the whole volume. Findings: – Extracting impedances between any numbers of embedded contacts with variable shapes or/and through silicon via. This 3D method is much faster comparing with FEM Originality/value: – Previous works consider TSVs alone, contacts onto the substrate. The authors do study entanglement between the substrate and the interconnections.