Cite
HARVARD Citation
Kawamura, T. et al. (2017). First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions. Physica status solidi. 254 (8), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Kawamura, T. et al. (2017). First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions. Physica status solidi. 254 (8), p. n/a. [Online].