Cite
HARVARD Citation
Youtsey, C. et al. (2017). Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017). Physica status solidi. 254 (8), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Youtsey, C. et al. (2017). Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching (Phys. Status Solidi B 8/2017). Physica status solidi. 254 (8), p. n/a. [Online].