Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping. Issue 8 (6th February 2017)

• Record Type: Journal Article
• Authors: Slomski, Michael; Paskov, Plamen P.; Leach, Jacob H.; Muth, John F.; Paskova, Tania
• Is Part Of: Physica status solidi. Volume 254:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-02-06
• Subjects: GaN -- HVPE growth -- Si doping -- thermal conductivity; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201600713
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : The thermal conductivity of bulk GaN grown by Hydride Phase Vapor Epitaxy with intentional Si doping was measured using the 3ω method. The effect of Si concentration ranging from 1.6 × 10 16 to 7 × 10 18 cm −3 on the thermal conductivity was studied over the temperature range of 295–470 K. The room temperature thermal conductivity was found to decrease with increasing Si doping from 245 to 210 W/m · K. Also, for each Si doped sample the thermal conductivity decreases with increasing temperature. The experimental data were analysed by a modified Callaway model and the contribution of different resistive phonon scattering process was examined. It was found that in n ‐type GaN the phonon‐free‐electron scattering became an important resistive process that leads to a reduction of the thermal conductivity at high temperatures. At the highest free electron concentrations, electronic thermal conduction was found to play a role in addition to lattice thermal conduction and compete with the effects of phonon‐free‐electron scattering.