100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10%. Issue 8 (11th January 2017)

• Record Type: Journal Article
• Authors: Li, Xiaohang; Wang, Shuo; Liu, Hanxiao; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.
• Is Part Of: Physica status solidi. Volume 254:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-11
• Subjects: BAlN -- boron -- MOCVD -- phases -- wurtzite; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201600699
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Growing thicker BAlN films while maintaining single‐phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm‐thick single‐phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow‐modulated epitaxy was employed to increase diffusion length of group‐III atoms and reduce parasitic reactions between the metalorganics and NH3 . A large growth efficiency of ∼2000 μm mol −1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.