Cite
HARVARD Citation
Reparaz, J. et al. (n.d.). Valence band structure engineering of thin SiGe/Si quantum wells for piezoresistive applications. Physica status solidi. 250 (4), pp. 760-764. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Reparaz, J. et al. (n.d.). Valence band structure engineering of thin SiGe/Si quantum wells for piezoresistive applications. Physica status solidi. 250 (4), pp. 760-764. [Online].