Sputtering and amorphization of crystalline semiconductors by Nanodroplet Bombardment. Issue 1 (10th January 2017)

• Record Type: Journal Article
• Authors: Grustan‐Gutierrez, Enric; Wei, Chuqi; Wang, Bingru; Lanza, Mario
• Is Part Of: Crystal research and technology. Volume 52:Issue 1(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-10
• Subjects: Amorphization -- Physical Sputtering -- Nanodroplet Bombardment; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201600240
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract : Nanodroplet bombardment (NB) is a method for physical sputtering with very high fast speed, and that can etch even the hardest materials, such as SiC. For these reasons, the NB technique can be very interesting for the fabrication of next generation MEMS and NEMS, using advanced materials. This paper makes a short review of the NB technique, and presents its impact on different materials surfaces, with special emphasis on the amorphization of Silicon. Abstract : In this review we expose how Nanodroplet Bombardment of surfaces by charged particles produced through electrospray atomization offers unparalleled opportunities for surface engineering of chemically inert crystalline materials. The sputtering yields and rates are comparable or higher than reactive etching techniques and significantly higher than other physical sputtering systems. Moreover, bombardment can amorphatize a thin layer of the target. The imposed physical characteristics of the electrospray, droplet diameter, molecular mass of the spray, and kinetic energy will determine the sputtering and amorphization efficiency, and the topography of the processed target. Molecular dynamics studies have clarified the mechanisms of both processes; amorphous layers appear due to ultra‐fast quenching of melted target pools around the impact area while sputtering is driven by a combination of collision cascades, thermal evaporation, and, for large and fast projectiles, of hydrodynamic forces.