Cite
HARVARD Citation
Chen, C. et al. (2016). Stack optimization of oxide-based RRAM for fast write speed (<1 μs) at low operating current (<10 μA). Solid-state electronics. pp. 198-203. [Online].
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Chen, C. et al. (2016). Stack optimization of oxide-based RRAM for fast write speed (<1 μs) at low operating current (<10 μA). Solid-state electronics. pp. 198-203. [Online].