Cite
HARVARD Citation
Pelloux-Prayer, J. et al. (2016). Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. Solid-state electronics. pp. 175-181. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Pelloux-Prayer, J. et al. (2016). Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. Solid-state electronics. pp. 175-181. [Online].