Review and perspective on ferroelectric HfO2-based thin films for memory applications. (28th August 2018)

• Record Type: Journal Article
• Authors: Park, Min Hyuk; Lee, Young Hwan; Mikolajick, Thomas; Schroeder, Uwe; Hwang, Cheol Seong
• Is Part Of: MRS communications. Volume 8:Number 3(2018)
• Page Start: 795
• Page End: 808
• Publication Date: 2018-08-28
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1557/mrc.2018.175
• Languages: English
• ISSNs: 2159-6859

Abstract

Abstract: Abstract : The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material's point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.