Semiconductor Heterojunctions for Enhanced Visible Light Photocatalytic H2 Production. (17th April 2018)

• Record Type: Journal Article
• Authors: Adhikari, Shiba P.; Hood, Zachary D.; Lachgar, Abdou
• Is Part Of: MRS advances. Volume 3:Number 55(2018)
• Page Start: 3263
• Page End: 3270
• Publication Date: 2018-04-17
• Subjects: energy generation, -- heterogenous, -- photochemical; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2018.370
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: Semiconductor-based heterojunctions have been shown to be effective photocatalytic materials to overcome the drawbacks of low photocatalytic efficiency that results from a high rate of electron−hole recombination and narrow photo-response range. In this paper, we report on the study of heterojunctions made from visible light active, graphitic carbon nitride, g-C3 N4 ), and UV light active, strontium pyroniobate, Sr2 Nb2 O7 . Heterojunctions made from a combination of g-C3 N4 and nitrogen-doped Sr2 Nb2 O7 obtained at different temperatures were also studied to determine the effect of N doping. The photocatalytic performance was evaluated by using photocatalytic hydrogen evolution reaction (HER)from water g under visible light irradiation. It was found that the photocatalytic activities of as prepared heterojunctions are significantly higher than that of individual components under similar conditions. Heterojunction formed from g-C3 N4 and N-doped Sr2 Nb2 O7 at 700 ° C (CN/SNON-700) showed better performance than heterojunction made from g-C3 N4 and Sr2 Nb2 O7 (CN/SNO). A plausible mechanism for the heterojunction enhanced photocatalytic activity is proposed based on, relative band positions, and photoluminescence data.