Material Reliability of Low-Temperature Boron Deposition for PureB Silicon Photodiode Fabrication. (26th June 2018)

• Record Type: Journal Article
• Authors: Nanver, L.K.; Lyon, K.; Liu, X.; Italiano, J.; Huffman, J.
• Is Part Of: MRS advances. Volume 3:Number 57/58(2018)
• Page Start: 3397
• Page End: 3402
• Publication Date: 2018-06-26
• Subjects: B, -- Si, -- electrical properties, -- interface, -- chemical vapor deposition (CVD) (chemical reaction); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2018.506
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: The chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400°C were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450°C and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen, and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.