Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy. (December 2016)

• Record Type: Journal Article
• Authors: Liu, Xue; Wang, Xiaohua; Wang, Dengkui; Tang, Jilong; Fang, Xuan; Fang, Dan; Li, Yongfeng; Yao, Bin; Ma, Xiaohui; Wang, Haizhu; Wei, Zhipeng
• Is Part Of: Vacuum. Volume 134(2016)
• Page Start: 136
• Page End: 140
• Publication Date: 2016-12
• Subjects: MgO/InP -- Thin film -- Heterostructure -- Band offset -- Atomic layer deposition; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2016.10.012
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: X-ray photoelectron spectroscopy was used to measure the valence-band offset ( ΔE V ) of MgO/InP heterostructure. Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation, the ΔE V value was the same (5.33 ± 0.15 eV) when using the In 3d3/2, Mg 2p pair and In 3d5/2, Mg 2p pair, indicating our calculations are accuracy and reasonable. Taking the band gaps of 7.83 eV for MgO and 1.34 eV for InP into consideration, a type-I band alignment of MgO/InP heterostructure was obtained with conduction band offset (CBO) of 1.16 ± 0.15 eV for two sets of core level pairs, indicating a nested interface band alignment heterostructure was prepared. The accurate determination of the band alignment of MgO/InP has a significant impact on the performance of InP-based devices. Highlights: Valence band offset of MgO/InP heterojunction was measured by X-ray photoelectron spectroscopy. Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation. The valence-band and conduction-band offset were 5.33 eV and 1.16 eV for two sets of core level pairs. Formation of considerable space charge like layer at the interface of MgO/InP heterostructure.