Synthesis and Characterization of Zirconium Disulfide Single Crystals and Thin‐Film Transistors Based on Multilayer Zirconium Disulfide Flakes. Issue 10 (6th September 2018)

• Record Type: Journal Article
• Authors: Shimazu, Yoshihiro; Fujisawa, Yutaro; Arai, Kensuke; Iwabuchi, Tatsuya; Suzuki, Kazuya
• Is Part Of: ChemNanoMat. Volume 4:Issue 10(2018)
• Page Start: 1078
• Page End: 1082
• Publication Date: 2018-09-06
• Subjects: zirconium disulfide -- 2D materials -- field-effect transistors -- transition-metal dichalcogenides -- layered semiconductors; Nanochemistry -- Periodicals; Nanostructured materials -- Periodicals; Nanochemistry; Nanostructured materials; Periodicals; 541.2
• DOI: 10.1002/cnma.201800304
• Languages: English
• ISSNs: 2199-692X

Abstract

Abstract: Single crystals of ZrS2 of the Group IVB transition metal dichalcogenide are synthesized by a chemical vapor transport method. The crystals are characterized by Raman spectroscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, and energy dispersive X‐ray spectroscopy. Field‐effect transistors are fabricated on Si substrates using exfoliated multilayer ZrS2 flakes as a channel material. N‐channel characteristics with an on/off ratio of approximately 200 are observed, and the field‐effect mobility is estimated. The large hysteresis in the transfer curves and the time‐dependent drain‐to‐source current can be attributed to the charge‐trapping centers at the ZrS2 /SiO2 interface. These results imply the significance of the interface and the potential applicability of ZrS2 as a novel 2D material for nanoelectronic devices. Abstract : Single crystals of zirconium disulfide are synthesized by a chemical vapor transport method. Field‐effect transistors using exfoliated multilayer ZrS2 flakes exhibit n‐channel characteristics with an on/off ratio of approximately 200. The large hysteresis in the transfer curves and the time‐dependent drain‐to‐source current can be attributed to the charge‐trapping centers at the ZrS2 /SiO2 interface.