Full-inorganic Sb2(S, Se)3 solar cells using carbon as both hole selection material and electrode. (10th November 2018)

• Record Type: Journal Article
• Authors: Wang, Weihuang; Chen, Guilin; Wang, Zhezhe; Wang, Ke; Chen, Shuiyuan; Huang, Zhigao; Wang, Xiaomin; Chen, Tao; Zhu, Changfei; Kong, Xiangkai
• Is Part Of: Electrochimica acta. Volume 290(2018)
• Page Start: 457
• Page End: 464
• Publication Date: 2018-11-10
• Subjects: Sb2(S, Se)3 -- Full-inorganic -- Selenization -- Solar cell -- Carbon; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2018.09.087
• Languages: English
• ISSNs: 0013-4686

Abstract

Abstract: Sb2 (S, Se)3 are considered as a promising absorber material for solar cells owing to its earth-abundant, nontoxic constituent, simple phase and long-term durability. In this work, a facile chemical bath deposition followed by post-selenization was introduced to prepare Sb2 (S, Se)3 thin film, which leads to a graded band gap structure. The sulfoselenide Sb2 (S, Se)3 thin films with smooth morphology were obtained through optimizing the selenization process. Meanwhile, a low cost and substitutable carbon electrode was used as hole selection material. Sequentially, the full-inorganic Sb2 (S, Se)3 device with efficiency of 2.64% was also fabricated according to structure of FTO/CdS/Sb2 (S, Se)3 /Carbon, which is the highest value in CBD processed FTO/CdS/Sb2 (S, Se)3 /Carbon solar cells. Graphical abstract: Highlights: Full in-organic Sb2 (S, Se)3 device is fabricated by CBD route followed post-selenization. A gradient band gap in Sb2 (S, Se)3 device is formed and exhibits efficiency of 2.64% with Voc of 645mV. The development of the crystal structure and morphology with increasing temperature was investigated carefully. The characteristics of the Sb2(S, Se)3 device were fully investigated.