Structural and Luminescence Properties of Ga2O3:Zn Micro‐ and Nanostructures. Issue 19 (22nd May 2018)

• Record Type: Journal Article
• Authors: López, Iñaki; Alonso‐Orts, Manuel; Nogales, Emilio; Méndez, Bianchi
• Other Names: Méndez Bianchi guestEditor.; Cremades Ana guestEditor.; Fernández Paloma guestEditor.
• Is Part Of: Physica status solidi. Volume 215:Issue 19(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-22
• Subjects: doping -- gallium oxide -- luminescence -- nanostructures; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201800217
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : High quality Zn‐doped monoclinic gallium oxide micro‐ and nanostructures are obtained by a thermal treatment based on vapor–solid (VS) growth mechanism. Nanowires and ribbons are formed, the latter being the more abundant. The microstructural features are assessed by micro‐Raman and transmission electron microscopy revealing their crystal structure properties, such as the [‐110] growth direction for ribbons and being single crystals. In particular, a strong‐scattered light polarization dependence is reflected in the detected Raman modes. Luminescence of both Zn doped and undoped Ga2 O3 samples is thoroughly studied by several techniques, exciting light with electrons or photons. Cathodoluminescence (CL) at a wide temperature range reveals that a band centered at around 2.7 eV, assigned to Zn doping in monoclinic Ga2 O3, is thermally activated at temperatures above 200 K and dominates at room temperature. Besides, the characteristic bands at 3.4 and 3.0 eV of undoped Ga2 O3 are obtained as well but with less relative intensity. Photoluminescence (PL) analysis at room temperature shows a similar set of bands, but slightly redshifted with respect to CL. Their relative intensities are strongly dependent on the excitation conditions and their time decays are studied by time‐resolved PL (TRPL). Abstract : Zn doping in Ga2 O3 is of high interest due to potential applications for electronic and optoelectronic devices. This work reports the study of Ga2 O3 :Zn micro‐ and nanostructures from the structural and luminescence point of view. Ribbons and nanowires with good crystal quality have been obtained. Their luminescence behavior has been analyzed with different cathodoluminescence and photoluminescence‐based techniques.