Front Cover: Synthesis and Characterization of Zirconium Disulfide Single Crystals and Thin‐Film Transistors Based on Multilayer Zirconium Disulfide Flakes (ChemNanoMat 10/2018). Issue 10 (19th September 2018)

• Record Type: Journal Article
• Authors: Shimazu, Yoshihiro; Fujisawa, Yutaro; Arai, Kensuke; Iwabuchi, Tatsuya; Suzuki, Kazuya
• Is Part Of: ChemNanoMat. Volume 4:Issue 10(2018)
• Page Start: 1021
• Page End: 1021
• Publication Date: 2018-09-19
• Subjects: zirconium disulfide -- 2D materials -- field-effect transistors -- transition-metal dichalcogenides -- layered semiconductors; Nanochemistry -- Periodicals; Nanostructured materials -- Periodicals; Nanochemistry; Nanostructured materials; Periodicals; 541.2
• DOI: 10.1002/cnma.201800426
• Languages: English
• ISSNs: 2199-692X

Abstract

Abstract : Semiconducting two‐dimensional materials such as transition metal dichalcogenides have attracted considerable attention because they can be used as ultrathin materials for various applications including flexible electronic devices. Single crystals of zirconium disulfide (ZrS2 ) are synthesized by a chemical vapor transport method. Field‐effect transistors using exfoliated multilayer ZrS2 flakes exhibit n‐channel characteristics with an on/off ratio of approximately 200. More information can be found in the Full Paper by Yoshihiro Shimazu et al. onpage 1078 in Issue 10, 2018 (DOI:10.1002/cnma.201800304 ).