In Situ Characterization and Modification of β‐Ga2O3 Flakes Using an Ion Micro‐Probe. Issue 19 (27th June 2018)

• Record Type: Journal Article
• Authors: Peres, Marco; Alves, Luis C.; Rocha, Flávia; Catarino, Norberto; Cruz, Carlos; Alves, Eduardo; Silva, Ana G.; Víllora, Encarna G.; Shimamura, Kiyoshi; Lorenz, Katharina
• Other Names: Méndez Bianchi guestEditor.; Cremades Ana guestEditor.; Fernández Paloma guestEditor.
• Is Part Of: Physica status solidi. Volume 215:Issue 19(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-06-27
• Subjects: β‐Ga2O3 -- ionoluminescence -- irradiation -- micro‐probe; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201800190
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In situ characterization of β‐Ga2 O3 flakes during proton irradiation is performed using ionoluminescence and electrical measurements. The quenching of the native blue‐UV emission bands due to irradiation‐induced defects in real time is monitored by ionoluminescence. Measurements of the I–V characteristics during irradiation present a good response of Ga2 O3 for particle detection and a good radiation resistance. Abstract : In situ characterization during proton irradiation using ionoluminescence measurements on β‐Ga2 O3 flakes shows a quenching of the native blue‐UV emission bands due to irradiation‐induced defects. The electrical characterization shows that the I–V ‐characteristic of a metal‐semiconductor‐metal device based on these flakes of β‐Ga2 O3 is hardly affected by irradiation and has a good response for particle detection.