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HARVARD Citation
Zhou, Q. et al. (2018). A novel enhancement-mode GaN vertical MOSFET with double hetero-junction for threshold voltage modulation. Superlattices and microstructures. pp. 297-305. [Online].
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Zhou, Q. et al. (2018). A novel enhancement-mode GaN vertical MOSFET with double hetero-junction for threshold voltage modulation. Superlattices and microstructures. pp. 297-305. [Online].