Cite
HARVARD Citation
Shi, T. et al. (2016). Atomic diffusion mediated by vacancy defects in pure and transition element (TM)-doped (TM = Ti, Y, Zr or Hf) L12 Al3Sc. Materials & design. pp. 529-537. [Online].
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Shi, T. et al. (2016). Atomic diffusion mediated by vacancy defects in pure and transition element (TM)-doped (TM = Ti, Y, Zr or Hf) L12 Al3Sc. Materials & design. pp. 529-537. [Online].