Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb0.8La0.1Ca0.1Ti0.975O3 seed layer. Issue 13 (October 2016)

• Record Type: Journal Article
• Authors: Zhang, Y.L.; Li, W.L.; Cao, W.P.; Zhang, T.D.; Bai, T.R.G.L.; Yu, Y.; Hou, Y.F.; Feng, Y.; Fei, W.D.
• Is Part Of: Ceramics international. Volume 42:Issue 13(2016)
• Page Start: 14788
• Page End: 14792
• Publication Date: 2016-10
• Subjects: NBT-BT thin films -- Sol-gel process -- Energy-storage; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2016.06.110
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: 0.94(Na0.5 Bi0.5 TiO3 )-0.06BaTiO3 ferroelectric thin films with and without the Pb0.8 La0.1 Ca0.1 Ti0.975 O3 seed layer were deposited on platinum-buffered silicon substrates by using Sol–Gel process. The influence of Pb0.8 La0.1 Ca0.1 Ti0.975 O3 seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb0.8 La0.1 Ca0.1 Ti0.975 O3 seed layer could improve the values of electric break-down field strength and P max - P r, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W =17.2 J/cm 3 and a high energy efficiency of η =74.3% were obtained for the 0.94(Na0.5 Bi0.5 TiO3 )-0.06BaTiO3 thin film with the Pb0.8 La0.1 Ca0.1 Ti0.975 O3 seed layer, which was annealed at 450 °C.