Cite
HARVARD Citation
Hu, G. et al. (2016). Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. Microelectronics journal. pp. 60-65. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Hu, G. et al. (2016). Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. Microelectronics journal. pp. 60-65. [Online].