Temperature effects on gallium arsenide 63Ni betavoltaic cell. (July 2017)

• Record Type: Journal Article
• Authors: Butera, S.; Lioliou, G.; Barnett, A.M.
• Is Part Of: Applied radiation and isotopes. Volume 125(2017:Jul.)
• Page Start: 42
• Page End: 47
• Publication Date: 2017-07
• Subjects: Gallium arsenide -- Betavoltaic -- Semiconductors; Radiology -- Periodicals; Radiation -- Industrial applications -- Periodicals; Nuclear chemistry -- Periodicals; Internet resource; Periodical; 660.298
• DOI: 10.1016/j.apradiso.2017.04.002
• Languages: English
• ISSNs: 0969-8043

Abstract

Abstract: A GaAs 63 Ni radioisotope betavoltaic cell is reported over the temperature range 70 °C to −20 °C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximum output power and an internal conversion efficiency of 1.8 pW (corresponding to 0.3 μW/Ci) and 7% were observed at −20 °C, respectively. Highlights: A GaAs 63 Ni radioisotope betavoltaic cell is reported. The temperature effects on the key cell parameters were studied from −20 °C to 70 °C. A maximum output power of 1.8 pW (corresponding to 0.3 μW/Ci) was obtained at −20 °C. An internal conversion efficiency of 7% was observed at −20 °C.