A theoretical scaling for rectifying and surface properties of highly-crystalline NC anthracene Schottky junctions. (January 2017)

• Record Type: Journal Article
• Authors: Varol, Songül Fiat; Sayin, Serkan; Eymur, Serkan; Uzun, Kübra
• Is Part Of: Materials research bulletin. Volume 85(2017)
• Page Start: 249
• Page End: 254
• Publication Date: 2017-01
• Subjects: Electronic materials -- Thin films -- Sol-gel chemistry -- Semiconductors -- Electrical properties; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2016.09.029
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: NAMA, which contains anthracene as core has been used in Schottky device. Sn/NAMA/n-Si is characterized by different methods under 1 h, 20 h, 36 h and 1 week. The electrical and surface properties have strongly dependent on aging period. NAMA exhibited a great increase in rectifying. Abstract: This article describes an anthracene derivative nitropyridine conjugated (NC) substituent has been efficiently used in Schottky junction applications. The effect of solution aging with a long period from 1 h to 1 week on diode parameters such as ideality factor, barrier height, and series resistance were studied in details. The barrier height varied almost linearly with aging and the values increased from 0.623 to 0.860 eV, 0.710 to 0.884 eV, 0.715 to 0.836 eV and 0.678 to 0.683 eV determined from I–V method, Cheung's, Norde's functions and C-V method, respectively, on the other hand, the ideality factor decreased from 3.08 to 1.55 and 3.24 to 1.52 determined from I–V and Cheung functions respectively, with increase in aging. Low ideality factor suggests an ideal Schottky junction formation. The series resistance values obtained from Norde's function and Cheung functions exhibited a good agreement and a strong dependence to solution aging.