Bipolar resistive switching properties of Cu-CuO-InGaZnO-AZO multilayer structure thin film. (2016)

• Record Type: Journal Article
• Authors: Deng, Yifeng; Li, Chunfu; Wei, Min; Deng, Hong; Chen, Yuzhong
• Is Part Of: International journal of nanotechnology. Volume 13:Number 10/11/12(2016)
• Page Start: 913
• Page End: 922
• Publication Date: 2016
• Subjects: resistive switching -- CuO -- IGZO -- AZO -- multilayer structure thin films -- multi-component metal oxide -- aluminium doped ZnO -- zinc oxide -- quartz substrate -- indium gallium ZnO -- InGa -- copper oxide -- cupric oxide -- switching devices -- on-off current ratio -- set-reset threshold voltage -- anti-fatigue properties; 620.505
• Languages: English
• ISSNs: 1475-7435

Abstract

A multilayer structure (Cu/CuO/InGaZO/AZO) resistive switching based on multi-component metal oxide is proposed and demonstrated. Al doped ZnO (AZO) thin film prepared on quartz substrate was chosen to be a bottom electrode owing to its high transparency and conductivity, then an InGaZnO (IGZO) thin film with high electronic mobility and ductility was grown on the substrate acting as a dielectric layer. We designed a CuO layer to be an electronic buffer layer between IGZO and top Cu electrode, which can play a critical role in increasing the On/Off current ratio. All of these four layers were prepared by RF magnetron sputtering at a low temperature of 200°C. Test results indicate that Cu/CuO/IGZO/AZO switching devices have about 10 2 on/off current ratio, (3.8∼4 V)/(−4∼−3.6 V) set/reset threshold voltage, and over 10 3 cycles anti-fatigue properties.