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HARVARD Citation
Jiang, C. et al. (n.d.). Strain buildup in 4H-SiC implanted with noble gases at low dose. Materials today. pp. 14722-14731. [Online].
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Jiang, C. et al. (n.d.). Strain buildup in 4H-SiC implanted with noble gases at low dose. Materials today. pp. 14722-14731. [Online].