Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium. (October 2015)

• Record Type: Journal Article
• Authors: Gao, J.; He, G.; Zhang, J.W.; Liu, Y.M.; Sun, Z.Q.
• Is Part Of: Materials research bulletin. Volume 70(2015:Oct.)
• Page Start: 840
• Page End: 846
• Publication Date: 2015-10
• Subjects: Optical properties -- Thin films -- Dielectrics -- Electrical properties; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2015.06.016
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: ALD-derived HfO2 gate dielectrics have been deposited on Si substrates. The leakage current mechanism for different deposition temperature was discussed. Different emission at different field region has been determined precisely. Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO2 thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO2 gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO2 films were determined by capacitance–voltage ( C – V ) and leakage current density–voltage ( J – V ) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO2 thin film with high quality.