Review of inorganic semiconductor based ultraviolet photodetectors with high internal gain and fast recovery speed. (2016)

• Record Type: Journal Article
• Authors: Lin, Fanrong; Meng, Leixin
• Is Part Of: International journal of nanomanufacturing. Volume 12:Number 3/4(2016)
• Page Start: 320
• Page End: 335
• Publication Date: 2016
• Subjects: ultraviolet photodetectors -- UV photodetectors -- internal gain -- photo response -- recovery time -- metal oxide -- persistent photoconductivity -- sensitivity -- inorganic semiconductors -- recovery speed; Nanostructured materials industry -- Periodicals; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1746-9392

Abstract

Ultraviolet (UV) photodetectors have important applications in military field, industrial field, environmental field, etc. High performance UV photodetectors characterised as high internal gain (G) and high recovery speed has been studied in decades. In this article, we provide a comprehensive review about recent works on increasing the internal gain of UV photodetectors by improving device configuration, optimising the diameter of the nanowire, applying surface functionalisation and Schottky contact. And the possible solutions to the persistent photoconductivity (PPC) problem which prolongs the recovery time are also discussed.