Cite
HARVARD Citation
Fialho, M. et al. (n.d.). Effect of AlN content on the lattice site location of terbium ions in AlxGa1−xN compounds. Semiconductor science and technology. p. . [Online].
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Fialho, M. et al. (n.d.). Effect of AlN content on the lattice site location of terbium ions in AlxGa1−xN compounds. Semiconductor science and technology. p. . [Online].