A scheme for spin-selective electron localization in Mn3Ga Heusler material. (8th April 2015)

• Record Type: Journal Article
• Authors: Wollmann, Lukas; Fecher, Gerhard H; Chadov, Stanislav; Felser, Claudia
• Is Part Of: Journal of physics. Volume 48:Number 16(2015)
• Publication Date: 2015-04-08
• Subjects: Heusler alloys -- localisation -- spin polarisation -- coherent potential approximation -- disorder engineering; Physics -- Periodicals; 530
• DOI: 10.1088/0022-3727/48/16/164004
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We demonstrate that tetragonal Mn3 Ga Heusler material allows for a new possibility of adjusting an electric current by means of the so-called spin-selective localization of conduction electrons. On the basis of a first-principles analysis, we propose possible chemical substitutes for Mn, which, when used in small quantities, can lead to a disorder-induced localization of the conduction electrons in a single spin channel. Replacement of the Mn in Mn3 − x Y x Ga with other 3 d transition metals Y is known not to change the tetragonal structure for a certain range of x . For Y = Co the range is x ⩽ 0.5. Therefore, substitution of Co for Mn is used in the present work as a prototype procedure for a detailed demonstration of the underlying physical mechanisms.