Defect levels in Cu(In, Ga)Se2 studied using capacitance and photocurrent techniques. (29th April 2016)

• Record Type: Journal Article
• Authors: Urbaniak, A; Macielak, K; Igalson, M; Szaniawski, P; Edoff, M
• Is Part Of: Journal of physics. Volume 28:Number 21(2016)
• Publication Date: 2016-04-29
• Subjects: solar cells -- defects -- DLTS -- CIGS; Condensed matter -- Periodicals; Matière condensée -- Périodiques; Vaste stoffen; Vloeistoffen; Natuurkunde; Electronic journals; Computer network resources; 530.4105
• DOI: 10.1088/0953-8984/28/21/215801
• Languages: English
• ISSNs: 0953-8984

Abstract

Abstract: This work contributes to the discussion on defect levels in Cu(In, Ga)Se2 photovoltaic material. CuInSe2 - and Cu(In, Ga)Se2 - based Schottky junctions, solar cells and thin films were investigated using complementary capacitance and current spectroscopic techniques. Depending on the applied technique and type of investigated structure, six different signals were observed. Out of the signals identified, three were ascribed to responses from bulk defects—two electron and one hole trap. The remainder were discussed in light of available in-literature models including carrier mobility freeze-out and non-ohmic back junction.