Cite
HARVARD Citation
Lee, S. et al. (2015). The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni–Pt salicidation FinFETs. Solid-state electronics. pp. 167-170. [Online].
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Lee, S. et al. (2015). The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni–Pt salicidation FinFETs. Solid-state electronics. pp. 167-170. [Online].